DocumentCode
3304664
Title
High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics
Author
Kuriyama, H. ; Kiyama, S. ; Noguchi, S. ; Kuwahara, T. ; Ishida, S. ; Nohda, T. ; Sano, Ko ; Iwata, H. ; Tsuda, S. ; Nakano, S.
Author_Institution
Sanyo Electric Co. Ltd., Osaka, Japan
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
563
Lastpage
566
Abstract
A high-mobility (280 cm/sup 2//V-s), high-throughput poly-Si TFT (thin-film transistor) formed using a low-temperature process (>
Keywords
elemental semiconductors; laser beam annealing; silicon; thin film transistors; 500 A; 5000 A; 600 C; excimer laser annealing; field effect mobility; grain size; high mobility TFT; large area electronics; low-temperature process; polycrystalline Si; polysilicon TFT; semiconductors; solidification control; substrate heating; thin-film transistor; Annealing; Grain size; Heating; Optical control; Process control; Semiconductor films; Solid lasers; Substrates; Temperature control; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235407
Filename
235407
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