Semiconductor quantum-dot based wideband emitter for optical sensors

Author

Djie, Hery S. ; Dimas, Clara E. ; Ooi, Boon S.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2005

fDate

Oct. 30 2005-Nov. 3 2005

Abstract

We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 mum wide) butt-connected to a broad-area photon absorber (50 mum wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20 degC) with wavelength peak at ~1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device

Keywords

optical feedback; optical sensors; ridge waveguides; semiconductor quantum dots; superluminescent diodes; 20 C; 4 micron; 50 micron; InGaAs-GaAs; broadband superluminescent diode; index-guided ridge-waveguide; lasing action suppression; optical feedback; optical sensors; photon absorber; semiconductor quantum-dot heterostructure; wideband emitter; Bandwidth; Biomedical optical imaging; Light sources; Optical feedback; Optical pumping; Optical sensors; Quantum dots; Stimulated emission; Superluminescent diodes; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2005 IEEE

Conference_Location

Irvine, CA

Print_ISBN

0-7803-9056-3

Type

conf

DOI

10.1109/ICSENS.2005.1597853

Filename

1597853