DocumentCode :
3304844
Title :
Transient response characterization of ohmic contact RF MEMS switches
Author :
Gu Hong-ming ; Miao, Lu ; Xue-Feng, Zhou ; Chun-Guang, Liang ; Bao-xin, Gao
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear :
2002
fDate :
17-19 Aug. 2002
Firstpage :
271
Lastpage :
274
Abstract :
The experimental characterization of the transient response within ohmic contact series RF MEMS switches is demonstrated in this paper. Standard devices are inserted into a time domain test setup, and the transient response is measured using an oscilloscope. The experimental results show that high-order mechanical vibration modes occur during the switching cycle. The response of the switch is analyzed by mechanical theory. This transient response characterization will lend deep insight into factors affecting the switch lifetime.
Keywords :
microswitches; ohmic contacts; oscilloscopes; semiconductor device testing; time-domain analysis; transient response; vibrational modes; high-order mechanical vibration modes; ohmic contact RF MEMS switches; oscilloscopes; series RF MEMS switches; switch lifetime factors; switch response mechanical theory analysis; switching cycle vibrations; time domain test setup; transient response characterization; transient response measurement; Capacitors; Fabrication; Microswitches; Ohmic contacts; Radiofrequency microelectromechanical systems; Structural beams; Switches; Testing; Transient response; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
Type :
conf
DOI :
10.1109/ICMMT.2002.1187688
Filename :
1187688
Link To Document :
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