Transient response characterization of ohmic contact RF MEMS switches

Author

Gu Hong-ming ; Miao, Lu ; Xue-Feng, Zhou ; Chun-Guang, Liang ; Bao-xin, Gao

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

271

Lastpage

274

Abstract

The experimental characterization of the transient response within ohmic contact series RF MEMS switches is demonstrated in this paper. Standard devices are inserted into a time domain test setup, and the transient response is measured using an oscilloscope. The experimental results show that high-order mechanical vibration modes occur during the switching cycle. The response of the switch is analyzed by mechanical theory. This transient response characterization will lend deep insight into factors affecting the switch lifetime.

Keywords

microswitches; ohmic contacts; oscilloscopes; semiconductor device testing; time-domain analysis; transient response; vibrational modes; high-order mechanical vibration modes; ohmic contact RF MEMS switches; oscilloscopes; series RF MEMS switches; switch lifetime factors; switch response mechanical theory analysis; switching cycle vibrations; time domain test setup; transient response characterization; transient response measurement; Capacitors; Fabrication; Microswitches; Ohmic contacts; Radiofrequency microelectromechanical systems; Structural beams; Switches; Testing; Transient response; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187688

Filename

1187688