Title :
Thermopower and electrical resistivity of undoped and co-doped /spl beta/-FeSi2 single crystals and /spl beta/-FeSi2+x thin films
Author :
Heinrich, A. ; Burkov, A. ; Gladun, C. ; Behr, G. ; Herz, K. ; Schumann, J. ; Powalla, H.
Author_Institution :
Inst. fur Festkorper- und Werkstofforschung Dresden, Germany
Abstract :
Thermopower and electrical resistivity have been investigated of /spl beta/-FeSi/sub 2/ single crystals and /spl beta/-FeSi/sub 2+x/ thin films in the temperature range from 40 K to 1200 K. The single crystals were grown by chemical transport reaction with source material of different purity and with a Si/Fe ratio between 1.5 and 2.5 to obtain crystals from the Fe-rich and Si-rich boundaries of the homogeneity range, respectively. The undoped and co-doped thin films have been prepared in the range -0.06\n\n\t\t
Keywords :
electrical resistivity; iron compounds; semiconductor materials; semiconductor thin films; thermoelectric power; /spl beta/-FeSi/sub 2+x/ thin films; /spl beta/-FeSi/sub 2/; 40 to 1200 K; FeSi/sub 2/; deviation from strict stoichiometry; electrical resistivity; low temperature thermopower; thermopower; Chemicals; Conducting materials; Conductivity; Crystalline materials; Crystals; Electric resistance; Iron; Semiconductor thin films; Temperature distribution; Transistors;
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
DOI :
10.1109/ICT.1996.553256
