A novel experimental investigation on scalable model for on-chip GaAs MESFETs

A comparative experimental investigation on various on-chip GaAs MESFETs is performed. These MESFETs are fabricated using the same technology, but with different finger number and gate width, respectively. From this comparison, a scalable drain-source current model with respect to MESFETs´ different finger number and gate width is deduced and verified with the measurement results. It is shown that the measured and simulated results are in good agreement in different device operation regions. Parametric studies are also performed and the generalised relationships between all parasitic element values and MESFETs´ configurations are obtained based on the fabricating technology of the measured on-chip GaAs MESFETs.