Title :
An accurate and compact large-signal model for MESFETs, HFETs and PHEMTs
Author :
Xuebang, Gao ; Lidong, Mo
Author_Institution :
Nat. Key GaAs IC Lab., Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
A new large-signal model and modeling method are presented. The pulsed I-V testing data is adopted to suppress the effects of traps and self-heating. The model has the enhanced simulation accuracy and convergence property. The improved parameter extraction technique has the features of efficiency and accuracy. The novel model has been verified in terms of I-V, C-V and power performance for different PHEMTs, HFETs and MESFETs as well as circuits.
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; junction gate field effect transistors; semiconductor device models; C-V characteristics; HFET; I-V characteristics; MESFET; PHEMT; large-signal model; parameter extraction; power characteristics; pulsed I-V testing; self-heating; traps; Capacitance-voltage characteristics; Circuit simulation; Data mining; HEMTs; Integrated circuit modeling; MESFETs; MODFETs; PHEMTs; Parameter extraction; Scattering parameters;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187698
