DocumentCode
3305029
Title
MOSFET stability analysis for RFIC design applications
Author
Guo, Wei ; Huang, Daquan
Author_Institution
Radio Frequency & Microwave Technol. Lab., Zhejiang Univ., Hangzhou, China
fYear
2002
fDate
17-19 Aug. 2002
Firstpage
315
Lastpage
317
Abstract
Using y-parameters, detailed MOSFET stability analysis for RFIC design is presented in this paper. According to the theoretical analysis results, a single MOSFET is conditionally stable. Therefore, in order for a MOSFET to work unconditionally stably, suitable measures must be taken in the circuit design. The computer aided simulation results are also given in the paper, which show a good agreement with the theoretical analysis conclusions.
Keywords
MOSFET; integrated circuit design; radiofrequency integrated circuits; MOSFET stability analysis; RFIC design; computer simulation; y-parameters; Analytical models; Circuit simulation; Circuit stability; Computational modeling; Computer simulation; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Resistors; Stability analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN
0-7803-7486-X
Type
conf
DOI
10.1109/ICMMT.2002.1187700
Filename
1187700
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