Title :
High speed Si PBT with buried single crystal silicide electrode by MBE
Author :
Ohshima, T. ; Nakamura, N. ; Nakagawa, K. ; Yamaguchi, K. ; Miyao, M.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Silicon permeable base transistors (PBTs) with buried single-crystal electrodes were fabricated by developing formation techniques using molecular beam epitaxy (MBE) for obtaining single-crystal-Si/silicide/Si double-heterostructures and silicide films in submicron size patterns. A high transconductance of 50 mS/mm and high current density of 2*10/sup 4/ A/cm/sup 2/ were obtained. The highest unity current gain frequency (f/sub T/) 6 GHz. Computer simulations indicated that the value of f/sub T/ was reasonable and could be improved by more than one order of magnitude (about 120 GHz) by optimizing the device structure.<>
Keywords :
bipolar transistors; current density; elemental semiconductors; molecular beam epitaxial growth; silicon; solid-state microwave devices; 50 mS; 6 GHz; CoSi grating gate; MBE; PBT; Si; buried single crystal silicide electrode; current density; double-heterostructures; high speed device; molecular beam epitaxy; permeable base transistors; submicron size patterns; transconductance; Computer simulation; Electrodes; Fabrication; Frequency; Lattices; Molecular beam epitaxial growth; Semiconductor films; Silicides; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235430
