DocumentCode
3305068
Title
Bulk Acoustic Wave Resonators 3D Simulation
Author
Giraud, Sylvain ; Bila, Stephane ; Aubourg, Michel ; Cros, Dominique
Author_Institution
Xlim, Limoges
fYear
2007
fDate
July 30 2007-Aug. 2 2007
Firstpage
327
Lastpage
330
Abstract
This article discusses numerical simulations of thin film bulk acoustic wave resonators. FBAR simulation with 1D analytical model permits to quickly determine resonator layers thicknesses that correspond to the objective resonant frequency. 3D finite elements method permits to investigate the effect of the electrode shape on the spurious modes that are present in the electrical impedance. In order to reduce or to suppress those modes, solutions have to be investigated.
Keywords
acoustic resonators; bulk acoustic wave devices; finite element analysis; 1D analytical model; 3D finite elements method; 3D simulation; FBAR simulation; electrical impedance; electrode shape; numerical simulations; resonant frequency; spurious modes; thin film bulk acoustic wave resonators; Acoustic waves; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Impedance; Numerical simulation; Resonant frequency; Shape; Transistors; Acoustic resonator; Bulk Acoustic Wave devices; Modeling; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems and Electronics, 2007. ISSSE '07. International Symposium on
Conference_Location
Montreal, Que.
Print_ISBN
1-4244-1448-2
Electronic_ISBN
1-4244-1449-0
Type
conf
DOI
10.1109/ISSSE.2007.4294479
Filename
4294479
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