DocumentCode
3305097
Title
Design and implementation of a 500 kHz switching PWM inverter without a dead-time
Author
Wada, Keiji ; Fujii, Takuya
Author_Institution
Tokyo Metropolitan Univ., Hachioji, Japan
fYear
2015
fDate
1-5 June 2015
Firstpage
2175
Lastpage
2179
Abstract
Developments of a high-frequency switching PWM inverter have been presented. In high-switching frequency PWM inverter, a dead time for preventing a short circuit of the inverter circuit is a one of the most critical issues. Especially, it will be affected to inverter operations, such as current distortions, output voltage reduction, and switching frequency limitations. In the case of using the Si-MOSFET, the dead time is normally set to at least 500-ns, and it is fixed value in each circuit. Therefore, the upper limitation of the switching frequency is limited by the dead time. This paper proposes a 500-kHz switching PWM inverter without dead time using Si-MOSFET, and it can be realized for setting low-voltage gate-drive operations. Moreover, it will present the experimental results for a single-phase PWM inverter, when the switching frequency is set to 500 kHz and DC voltage is set to 300 V.
Keywords
MOSFET circuits; PWM invertors; elemental semiconductors; silicon; switching convertors; Si; Si-MOSFET; dead-time; frequency 500 kHz; high-frequency switching PWM inverter; high-switching frequency PWM inverter; low-voltage gate-drive operations; single-phase PWM inverter; voltage 300 V; Inverters; Logic gates; MOSFET; Pulse width modulation; Switches; Switching circuits; Switching frequency; Dead time; High frequency switching; MOS-FET; PWM inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location
Seoul
Type
conf
DOI
10.1109/ICPE.2015.7168078
Filename
7168078
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