Title :
Physics and technology of ultra short channel MOSFET devices
Author :
Antoniadis, D.A. ; Chung, J.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
It is pointed out that, as MOSFET channel lengths are scaled below about 0.15 mu m, nonstationary carrier transport effects become increasingly important. These effects can result in increased drain current over what is expected from stationary transport theory (i.e. velocity saturation), and in decreased hot-carrier energy spectrum spread, or carrier temperature, leading to improved device reliability. However, the magnitude of these effects depends strongly not only on channel length but also on overall device design such as channel doping configuration, drain junction depth, etc. Besides minimization of junction depths, optimal device design requires a super-steep-retrograde channel doping, with surface doping concentration no higher than mid-10/sup 16/ cm/sup -3/. This can be achieved with indium doping for NMOS, and antimony or arsenic doping for PMOS extreme submicron transistors.<>
Keywords :
hot carriers; insulated gate field effect transistors; leakage currents; semiconductor doping; 0.15 micron; MOSFET devices; NMOS; PMOS; Si:As; Si:In; Si:Sb; carrier temperature; channel doping configuration; channel lengths; drain current; drain junction depth; extreme submicron transistors; hot-carrier energy spectrum spread; nonstationary carrier transport effects; optimal device design; super-steep-retrograde channel doping; surface doping concentration; ultra short channel; velocity saturation; Charge carrier processes; Doping; Equations; Hydrodynamics; MOSFET circuits; Physics; Predictive models; Reliability theory; Temperature; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235433
