Alternate metal virtual ground EPROM array implemented in a 0.8 mu m process for very high density applications

Author

Kazerounian, R. ; Bergemont, A. ; Roy, A. ; Wolstenholme, G. ; Irani, R. ; Shamay, M. ; Gaffur, H. ; Rezvani, G.A. ; Anderson, L. ; Haggag, H. ; Shacham, E. ; Kauk, P. ; Nielson, P. ; Kablanian, A. ; Chhor, K. ; Perry, J. ; Sethi, R. ; Eitan, B.

Author_Institution

WSI, Fremont, CA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

311

Lastpage

314

Abstract

The alternate metal virtual ground EPROM array (AMG) is introduced as a new scaling concept. This array dramatically reduces cell size by making poly pitch the only limitation in both X and Y directions. The AMG concept scales cell size by sharing one metal line per two diffusion bit lines and relies on a segmentation scheme and fieldless array to achieve the poly pitch limited cell. The cell size in 0.8- mu m technology is 2.56 mu m/sup 2/, which is considerably smaller than the standard EPROM cell in 0.6- mu m technology. A major advantage of this array is reduction of drain turn-on induced punch-through. This reduction allows scaling of effective channel length to as low as 0.25 mu m, resulting in high read current and fast programming time.<>

Keywords

CMOS integrated circuits; EPROM; VLSI; integrated memory circuits; 0.25 micron; 0.8 micron; CMOS; ULSI; alternate metal virtual ground; cell size; effective channel length; fieldless array; high density applications; poly pitch limited cell; programming time; read current; scaling concept; segmentation scheme; sharing one metal line; EPROM; Process design; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235441

Filename

235441