Author :
Kazerounian, R. ; Bergemont, A. ; Roy, A. ; Wolstenholme, G. ; Irani, R. ; Shamay, M. ; Gaffur, H. ; Rezvani, G.A. ; Anderson, L. ; Haggag, H. ; Shacham, E. ; Kauk, P. ; Nielson, P. ; Kablanian, A. ; Chhor, K. ; Perry, J. ; Sethi, R. ; Eitan, B.
Abstract :
The alternate metal virtual ground EPROM array (AMG) is introduced as a new scaling concept. This array dramatically reduces cell size by making poly pitch the only limitation in both X and Y directions. The AMG concept scales cell size by sharing one metal line per two diffusion bit lines and relies on a segmentation scheme and fieldless array to achieve the poly pitch limited cell. The cell size in 0.8- mu m technology is 2.56 mu m/sup 2/, which is considerably smaller than the standard EPROM cell in 0.6- mu m technology. A major advantage of this array is reduction of drain turn-on induced punch-through. This reduction allows scaling of effective channel length to as low as 0.25 mu m, resulting in high read current and fast programming time.<>
Keywords :
CMOS integrated circuits; EPROM; VLSI; integrated memory circuits; 0.25 micron; 0.8 micron; CMOS; ULSI; alternate metal virtual ground; cell size; effective channel length; fieldless array; high density applications; poly pitch limited cell; programming time; read current; scaling concept; segmentation scheme; sharing one metal line; EPROM; Process design; Voltage;
