Title :
A quarter-micron interconnection technology using Al-Si-Cu/TiN alternated layers
Author :
Kikkawa, T. ; Aoki, H. ; Ikawa, E. ; Drynan, J.
Author_Institution :
NEC Corp., Sagamihara City, Japan
Abstract :
A novel interconnection structure using Al-Si-Cu/TiN alternated layers has been investigated as a quarter-micron interconnection candidate for 256 MDRAM. A TiN/Al-1%Si-0.5%Cu/TiN/Al-1%Si-0.5%Cu/TiN/Ti layered film structure was designed for both electro- and stress-migration-resistant interconnections. This alternated layer structure has extremely high endurances in terms of mechanical hardness, tensile strength, and electromigration lifetime.<>
Keywords :
DRAM chips; VLSI; aluminium alloys; copper alloys; metallisation; silicon alloys; 0.25 micron; 256 Mbit; Al-Si-Cu alloys; AlSiCu-TiN; DRAM; ULSI; alternated layer structure; electromigration lifetime; electromigration resistance; electromigration resistant interconnections; high endurances; interconnection structure; layered film structure; mechanical hardness; quarter-micron interconnection technology; stress migration resistance; stress-migration-resistant interconnections; tensile strength; Annealing; Argon; Conductors; Plasma measurements; Plasma temperature; Scanning electron microscopy; Sputtering; Substrates; Tin; Titanium;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235448
