DocumentCode
3305389
Title
A novel Al-Sc (scandium) alloy for future LSI interconnection
Author
Ogawa, S. ; Nishimura, H.
Author_Institution
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
277
Lastpage
280
Abstract
A new aluminum alloy, Al-Sc (scandium), has been studied in comparison with a conventional Al-Si-Cu alloy for future LSI interconnection. It has been found that Sc addition into Al completely suppressed a failure caused by a stress-induced migration phenomenon (SM) in submicron lines and hillock generation, while showing superior electromigration (EM) performance to conventional Cu addition. The new impurity, Sc, precipitates and presumably acts as a sink site for vacancies, which are the origin of the degradation in reliability by SM and EM.<>
Keywords
VLSI; aluminium alloys; electromigration; metallisation; reliability; scandium alloys; Al-Si alloy metallisation; LSI interconnection; VLSI; electromigration; hillock generation; reliability; stress migration; stress-induced migration phenomenon; submicron lines; Aluminum; Annealing; Artificial intelligence; Large scale integration; Rough surfaces; Samarium; Semiconductor films; Stress; Surface resistance; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235449
Filename
235449
Link To Document