Ultra-low-noise fully ion-implanted GaAs-MESFET with Au/WSiN refractory metal gate

Author

Onodera, Kiyomitsu ; Nishimura, Kazumi ; Sugitani, Suehiro ; Asai, Kazuyoshi

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

251

Lastpage

254

Abstract

A fully ion-implanted n/sup +/ self-aligned GaAs-MESFET with Au/WSiN refractory gate is developed. The MESFETs with 0.35- mu m gate length demonstrate a maximum cutoff frequency of 76 GHz and even under the low-noise condition realize a cutoff frequency over 60 GHz. A minimum noise figure of 0.81 dB with an associated gain of 7.7 dB has been obtained at 18 GHz. The K/sub f/ factor was estimated to be 1.4, according to the Fukui noise figure equation and the fitted equivalent circuit. This is the lowest noise figure ever reported for a GaAs-MESFET, and is comparable to those for AlGaAs/GaAs HEMTs (high electron mobility transistors) of the same geometry.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; semiconductor device noise; solid-state microwave devices; 0.35 micron; 0.81 dB; 18 to 76 GHz; 7.7 dB; Au-WSiN-GaAs; Fukui noise figure equation; GaAs-MESFET; T-gate; equivalent circuit; gain; gate length; ion-implanted; low noise MESFETs; maximum cutoff frequency; minimum noise figure; refractory gate; refractory metal gate; self-aligned; semiconductors; Cutoff frequency; Equations; Equivalent circuits; Gain; Gallium arsenide; Gold; HEMTs; MESFETs; MODFETs; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235455

Filename

235455