Title :
140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT
Author :
Tan, K.L. ; Streit, D.C. ; Chow, P.D. ; Dia, R.M. ; Han, A.C. ; Liu, P.H. ; Garske, D. ; Lai, R.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Abstract :
The authors report the design, fabrication, and millimeter-wave performance of 0.1- mu m T-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP high electron mobility transistors (HEMTs). When tuned and biased for minimum noise, the device achieved a noise figure of 1.3 dB with 8.2-dB associated gain at 95 GHz. When tested at D-band, the device achieved a gain of 7.3 dB at 141.5 GHz. The gain at both these frequencies is the highest ever reported for InP HEMTs, and demonstrates the feasibility of this device technology for operating at frequencies beyond 100 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; solid-state microwave devices; 0.1 micron; 1.3 dB; 7.3 dB; 8.2 dB; 95 to 141.5 GHz; D-band; EHF; HEMTs; InAlAs-InGaAs-InP; InP substrate; T-gate; design; device technology; fabrication; gain; gate-length; high electron mobility transistors; millimeter-wave performance; noise figure; pseudomorphic HEMT; semiconductors; Fabrication; Frequency; Gain; HEMTs; Indium phosphide; MODFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure; Testing;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235458
