Field emission diodes with tungsten wedge cathode

Author

Carr, W.N. ; Kim, J.M. ; Zeto, R.J. ; Zakar, E.S. ; Mulford, C.D.

Author_Institution

Microelectron Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

225

Lastpage

228

Abstract

A process technology and device characterization for vacuum microelectronic diodes with a lateral electron trajectory are described. The cathode for the diode devices is fabricated with successive deposition of Al-W-Ti:W utilizing DC magnetron sputtering. The aluminum film is partially sacrificed to achieve the necessary sharp tip of tungsten for field emission. The metals are deposited by DC magnetron sputtering followed by liftoff lithography and thermal annealing. Selected devices which are electrically characterized in 2 to 5*10/sup -9/ torr vacuum are compared with the Fowler-Nordheim-based model. The cathode-to-anode lateral spacing in these devices is 0.8 mu m. A maximum of 23- mu A current is obtained from the cathode of one of the devices investigated. Static electrical characteristics predicted by the Fowler-Nordheim relationship are compared with experimental data.<>

Keywords

diodes; electron field emission; sputtered coatings; tungsten; vacuum microelectronics; 0.8 micron; 23 muA; 2E-9 to 5E-9 torr; Al-W-Ti:W; DC magnetron sputtering; Fowler-Nordheim-based model; W wedge cathode; cathode-to-anode lateral spacing; current; device characterization; electrical characteristics; experimental data; field emission cathodes; field emission diodes; lateral electron trajectory; liftoff lithography; process technology; sharp tip; successive deposition; thermal annealing; vacuum microelectronic diodes; Aluminum; Cathodes; Diodes; Electrons; Lithography; Magnetic devices; Microelectronics; Sputtering; Tungsten; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235461

Filename

235461