Point and wedge tungsten-on-silicon field emitter arrays

Author

Gray, H.F. ; Shaw, J.L.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

221

Lastpage

224

Abstract

The authors have measured 20 mu A/tip from single-tip silicon field emitter array (FEA) cells made from 10/sup 15//cm/sup 3/ n-type silicon. The current-voltage characteristics show a linear Fowler-Nordheim relationship and do not show current saturation. These results indicate that silicon-based FEAs might be able to compete with metal-based FEAs for RF power applications. In addition, the authors report the fabrication of silicon-based wedge, trench, and tungsten-on-silicon FEA structures. These new structures might have advantages and disadvantages compared with the classical point-like structures in some applications such as linear beam tubes.<>

Keywords

electron field emission; silicon; tungsten; vacuum microelectronics; 20 muA; RF power applications; Si field emitters; W on Si emitters; W-Si; current-voltage characteristics; field emitter arrays; linear Fowler-Nordheim relationship; linear beam tubes; point emitters; trench emitters; wedge emitters; Current density; Current measurement; Density measurement; Fabrication; Field emitter arrays; Heating; Neck; Oxidation; Protection; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235462

Filename

235462