DocumentCode :
3305814
Title :
Plasma Surface Modification and Gas Sensing Properties of SnO2 Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
Author :
Tan, O.K. ; Huang, H. ; Lee, Y.C. ; Tse, M.S. ; Guo, J. ; White, T.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2005
fDate :
Oct. 30 2005-Nov. 3 2005
Firstpage :
1181
Lastpage :
1183
Abstract :
SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as the precursor. The as-deposited SnO2 thin films were granular with a grain size of 20 nm. The as-deposited thin films were post-treated in the plasma to modify the films surface morphologies. After plasma treatment, uniform nanorods in the size of Phi7 times 200 nm were observed in the plasma-treated SnO2 thin films. The gas sensing properties of the as-deposited and plasma-treated SnO2 thin films were comparatively studied. The plasma-treated sample with nanorods showed much higher sensitivity, faster response and shorter recovery time compared to the as-deposited sample with nanograins. The tremendous improvement of the gas sensing properties of the plasma-treated sample was believed to be attributed to the intrinsically small grain size comparable to the space-charge length and high surface-to-volume ratios associated with the nanorods
Keywords :
arsenic; gas sensors; nanostructured materials; plasma CVD; surface morphology; surface treatment; tin compounds; 20 nm; SnO2; dibutyltin diacetate; gas sensing property; nanorods; plasma enhanced chemical vapor deposition; plasma surface modification; plasma treatment; surface morphology; Chemical vapor deposition; Materials science and technology; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma temperature; Plasma x-ray sources; Sputtering; Surface morphology; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
Type :
conf
DOI :
10.1109/ICSENS.2005.1597916
Filename :
1597916
Link To Document :
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