Title :
Switching behavior and current handling performance of MCT:IGBT cell ensembles
Author :
Lendenmann, H. ; Dettmer, H. ; Fichtner, W. ; Baliga, B.J. ; Bauer, F. ; Stockmeier, T.
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The dynamic characteristics of large MCT (MOS controlled thyristor) ensembles have been improved by integrating IGBT (insulated-gated bipolar transistor) cells for turn-on and different schemes of cathode and anode shorting for turn-off. Such MCT-IGBT ensembles with integrated shorts are able to turn off 4 A (240 A-cm/sup -2/) at 1000 V in typically 1.5 mu s in the inductive clamped mode. The authors report on the effectiveness of these different approaches and their parasitic influence on the turn-on characteristic and the maximum turn-off current capability. The implementation of permanent cathode shorts has lead to an increase of the maximum turn-off current of large MCT ensembles, whereas anode shorting leads to faster turn-off and lower tail currents. A careful design of the IGBT turn-on cell and placement is required for proper MOS turn-on even at low anode voltages.<>
Keywords :
BIMOS integrated circuits; insulated gate bipolar transistors; thyristors; 1 kV; 1.5 mus; 4 A; MCT-IGBT ensembles; MCT:IGBT cell ensembles; MOS controlled thyristor; anode shorting; current handling performance; dynamic characteristics; inductive clamped mode; insulated-gated bipolar transistor; integrated shorts; maximum turn-off current capability; parasitic influence; permanent cathode shorts; switching behaviour; turn-off; turn-on; turn-on characteristic; Anodes; Cathodes; Circuits; Gratings; Insulated gate bipolar transistors; MOSFETs; Power electronics; Protection; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235479
