Title :
A high current power IC technology using trench DMOS power device
Author :
Mukherjee, S. ; Kim, M. ; Tsou, L. ; Wong, S. ; Young, J.C.
Author_Institution :
North American Philips Corp., Briarcliff Manor, NY, USA
Abstract :
A high-current power IC (PIC) technology that combines trench DMOS power devices with CMOS control is described. In the CMOS section, both high-voltage (60 V) and low-voltage (10 V) P- and N-channel MOS transistors allow dense control as well as high-voltage operation. The trench DMOS power device has a breakdown voltage of over 60 V and specific on resistance of 80 m Omega -mm/sup 2/. Using this technology, a high side switch PIC has been demonstrated for automotive applications. The low specific R/sub on/ and the dense control capability enable the PIC to handle up to 10 A of current with a die size of 8 mm/sup 2/.<>
Keywords :
CMOS integrated circuits; MOS integrated circuits; automotive electronics; integrated circuit technology; power integrated circuits; power transistors; 10 A; 10 V; 60 V; CMOS control; automotive applications; breakdown voltage; die size; high current power IC technology; high side switch PIC; high-voltage operation; specific on resistance; trench DMOS power device; Automotive applications; CMOS process; CMOS technology; Integrated circuit technology; Low voltage; MOS devices; MOSFETs; Power integrated circuits; Switches; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235480
