Evaluation of impact ionization modeling in the framework of hydrodynamic equations

Author

Peifer, H.J. ; Meinerzhagen, B. ; Thoma, R. ; Engl, W.L.

Author_Institution

Inst. fuer Theoretische Elektrotech., Aachen Univ., Germany

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

131

Lastpage

134

Abstract

Using consistent Monte Carlo (MC) and hydrodynamic (HD) MOS device models the validity of the three impact ionization modeling approaches which are most frequently used in the framework of hydrodynamic equation is examined with the MC model as physical reference. Good agreement with the MC reference for substrate currents as well as spatial impact ionization distributions is observed for the HD model in combination with an improved version of the nonlocal field line based lucky electron model reported by B. Meinerzhagen (1988). The agreement of impact ionization distributions is poor if the HD model is combined with either a local field or local carrier temperature model. But substrate current results are still satisfactory for the carrier temperature model of R.K. Mains et al. (1983).<>

Keywords

Monte Carlo methods; impact ionisation; insulated gate field effect transistors; semiconductor device models; HD model; MOS device models; Monte Carlo model; carrier temperature model; hydrodynamic equations; impact ionization modeling; lucky electron model; spatial impact ionization distributions; substrate currents; Electrons; Electrostatics; Equations; High definition video; Hydrodynamics; Impact ionization; Monte Carlo methods; Optical scattering; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235483

Filename

235483