DocumentCode :
3306020
Title :
Non-local impact ionization in silicon devices
Author :
Slotboom, J.W. ; Streutker, G. ; van Dort, M.J. ; Woerlee, P.H. ; Pruijmboom, A. ; Gravesteijn, D.J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
1991
fDate :
8-11 Dec. 1991
Firstpage :
127
Lastpage :
130
Abstract :
In small bipolar and MOS transistors, the electrons gain much less energy than according to the maximum electric field. This is due to nonlocal electron heating and the small width of the E-field peak. The simplified energy balance equation with the energy relaxation length lambda /sub e/ as parameter gives the electron temperature for a given electric field distribution. From a series of MBE (molecular beam epitaxy)-grown bipolar transistors and scaled submicron MOS transistors, lambda /sub e/=650 AA was found. With the calculated temperature distribution and known empirical models for the impact ionization, avalanche (substrate) currents are accurately predicted. This procedure can easily be implemented, as postprocessing, in existing device simulators with hardly any extra computation time. It extends in a consistent way the validity range of these simulators to future device generations.<>
Keywords :
bipolar transistors; elemental semiconductors; impact ionisation; insulated gate field effect transistors; semiconductor device models; silicon; E-field peak; MBE grown bipolar transistors; Si devices; avalanche current; computation time; electron temperature; energy balance equation; energy relaxation length; existing device simulators; impact ionization; nonlocal electron heating; nonlocal impact ionization; semiconductors; small MOS transistors; small bipolar transistors; submicron MOS transistors; substrate currents; Bipolar transistors; Computational modeling; Electrons; Equations; Heating; Impact ionization; MOSFETs; Molecular beam epitaxial growth; Silicon devices; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0243-5
Type :
conf
DOI :
10.1109/IEDM.1991.235484
Filename :
235484
Link To Document :
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