مرکز منطقه ای اطلاع رساني علوم و فناوري - In-Situ Phosphorus Doping on Si/sub 1-x/Ge/sub x/ Epitaxial Growth In The SiH/sub 4/ - GeH/sub 4/

DocumentCode :

330619

Title :

In-Situ Phosphorus Doping on Si/sub 1-x/Ge/sub x/ Epitaxial Growth In The SiH/sub 4/ - GeH/sub 4/ - PH/sub 3/ Gas System by Using LPCVD

Author :

Lee, Cheol Jin ; Matsuura, Takashi ; Murota, Junichi

Author_Institution :

Kunsan National University

fYear :

1998

fDate :

13-16 July 1998

Firstpage :

Lastpage :

Keywords :

Atomic layer deposition; Atomic measurements; Buffer layers; Doping; Electrooptic effects; Epitaxial growth; Fabrication; Silicon; Substrates; Temperature;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location :

Kyoungju, South Korea

Print_ISBN :

4-930813-83-2

Type :

conf

DOI :

10.1109/IMNC.1998.729935

Filename :

729935

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330619