• DocumentCode
    330619
  • Title

    In-Situ Phosphorus Doping on Si/sub 1-x/Ge/sub x/ Epitaxial Growth In The SiH/sub 4/ - GeH/sub 4/ - PH/sub 3/ Gas System by Using LPCVD

  • Author

    Lee, Cheol Jin ; Matsuura, Takashi ; Murota, Junichi

  • Author_Institution
    Kunsan National University
  • fYear
    1998
  • fDate
    13-16 July 1998
  • Firstpage
    31
  • Lastpage
    32
  • Keywords
    Atomic layer deposition; Atomic measurements; Buffer layers; Doping; Electrooptic effects; Epitaxial growth; Fabrication; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1998 International
  • Conference_Location
    Kyoungju, South Korea
  • Print_ISBN
    4-930813-83-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1998.729935
  • Filename
    729935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=330619