DocumentCode :
330620
Title :
Hydrogen Effects On Heteroepitaxial Growth Of Ge Films On Si
Author :
Ikeda, H. ; Muto, A. ; Okada, M. ; Suzumura, I. ; Zaima, S. ; Yasuda, Y.
Author_Institution :
Nagoya University
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
33
Lastpage :
34
Keywords :
Atomic layer deposition; Crystalline materials; Epitaxial growth; Hydrogen; Materials science and technology; Semiconductor films; Solids; Substrates; Surface cleaning; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.729936
Filename :
729936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330620
