Title :
MBE growth and characterization of lattice-matched and pseudomorphic InGaAs/InAlAs/InP HEMTs
Author :
Streit, D.C. ; Tan, K.L. ; Liu, P.H. ; Chow, P.D. ; Velebir, J.R. ; Lai, R. ; Block, T.R. ; Stolt, K.S. ; Wojtowicz, M.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Abstract :
The authors report the effect of profile design and MBE (molecular beam epitaxy) growth conditions on the material characteristics and device performance of W-band and D-band InGaAs/InAlAs/InP HEMTs (high electron mobility transistors). The performance advantage of pseudomorphic channels compared to lattice-matched devices is significant in these devices. Using lattice-matched In/sub 0.53/Ga/sub 0.47/As channels, a noise figure of 1.7 dB with 7.7-dB associated gain at 93 GHz has been achieved. However, using pseudomorphic In/sub 0.60/Ga/sub 0.40/As channels, a 1.3-dB noise figure with 8.2-dB associated gain at 93.5 GHz has been achieved. The authors have also measured 7.3-dB gain at 141.5 GHz using In/sub 0.60/Ga/sub 0.40/As devices.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 1.3 dB; 1.7 dB; 141.5 GHz; 7.3 dB; 7.7 dB; 8.2 dB; 93 GHz; D-band; HEMT; III-V semiconductor; InGaAs-InAlAs-InP devices; MBE growth; W-band; device performance; gain; lattice-matched devices; noise figure; profile design; pseudomorphic channels; Calibration; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Noise figure; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235543
