Title :
A two-step liquid phase epitaxial growth process for high open circuit voltage thin film InP solar cells
Author :
Kilmer, L.C. ; Barnett, A.M.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Abstract :
The authors present a two-step liquid phase epitaxial growth procedure which is designed to yield the highest possible open-circuit-voltage InP solar cell. The design of the solar cell includes an internal oxide layer which limits the high saturation current density contact area. The solar cell design manipulates the properties of InP and that of a p-n junction, and results in an open circuit voltage of 0.970 V. The fabrication of the solar cell design is not specific to solar cells, but is directly applicable to other thin film InP devices as well. The fabrication procedure and device results are presented.<>
Keywords :
III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; solar cells; 0.97 V; III-V semiconductor; fabrication procedure; high open circuit voltage; internal oxide layer; solar cell design; thin film InP solar cells; two-step liquid phase epitaxial growth; Boats; Buffer layers; Epitaxial growth; Fabrication; Fingers; Indium phosphide; Photovoltaic cells; Surface cleaning; Thin film circuits; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235547
