Title :
High quality InGaAs/InP and InAlAs/InP heterostructures beyond the Matthews-Blakeslee critical layer thickness
Author :
Bennett, B.R. ; del Alamo, Jesus A.
Author_Institution :
MIT., Cambridge, MA, USA
Abstract :
Mismatched epitaxial layers of InGaAs and InAlAs were grown on InP by molecular beam epitaxy. Double-crystal X-ray diffraction measurements show that the crystalline quality of the layers consistently remains unperturbed to thicknesses up to 3-8 times the Matthews-Blakeslee critical layer thickness. The findings are applied to the growth of high-performance mismatched InAlAs/InGaAs/InP heterostructure field-effect transistors.<>
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; III-V semiconductors; InAlAs-InGaAs-InP; InAlAs-InP heterostructures; InGaAs-InP heterostructures; Matthews-Blakeslee critical layer thickness; X-ray diffraction; crystalline quality; heterostructure field-effect transistors; high-performance mismatched; lattice mismatch; molecular beam epitaxy; Crystallization; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Thickness measurement; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235553
