High quality InGaAs/InP and InAlAs/InP heterostructures beyond the Matthews-Blakeslee critical layer thickness

Author

Bennett, B.R. ; del Alamo, Jesus A.

Author_Institution

MIT., Cambridge, MA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

650

Lastpage

653

Abstract

Mismatched epitaxial layers of InGaAs and InAlAs were grown on InP by molecular beam epitaxy. Double-crystal X-ray diffraction measurements show that the crystalline quality of the layers consistently remains unperturbed to thicknesses up to 3-8 times the Matthews-Blakeslee critical layer thickness. The findings are applied to the growth of high-performance mismatched InAlAs/InGaAs/InP heterostructure field-effect transistors.<>

Keywords

III-V semiconductors; X-ray diffraction examination of materials; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; III-V semiconductors; InAlAs-InGaAs-InP; InAlAs-InP heterostructures; InGaAs-InP heterostructures; Matthews-Blakeslee critical layer thickness; X-ray diffraction; crystalline quality; heterostructure field-effect transistors; high-performance mismatched; lattice mismatch; molecular beam epitaxy; Crystallization; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Thickness measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235553

Filename

235553