Title :
In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs
Author :
Tsuchiya, T. ; Taniwatari, T. ; Uomi, K. ; Kawano, T. ; Ono, Y.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high resolution. In-situ X-ray monitoring was applied to the feedback growth of a strained InGaAs layer. The precise control of lattice mismatch of the InGaAs layer was achieved by the feedback growth.<>
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; III-V semiconductor; InGaAs-InP; InP substrate; MOVPE; feedback growth; in-situ X-ray monitoring; lattice mismatch; strained InGaAs; temperature dependence; Condition monitoring; Epitaxial growth; Epitaxial layers; Feedback; Fluid flow; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235554
