Title :
Hybrid OMVPE/VME for long-life lasers on Si
Author :
Sugo, M. ; Mori, H. ; Itoh, Y.
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
Abstract :
The authors employ a hybrid organometallic vapor phase epitaxy/vapor mixing epitaxy (OMVPE/VME) method and a layer structure for improving crystalline quality to obtain high-quality InGaAs/InGaAsP multiple quantum well (MQW) layers on Si. The laser active layers on Si have an excellent optical property comparable to the active layers on InP despite a high dislocation density of 10/sup 7/ cm/sup -2/. This results from the regularity of dislocation distribution that forms in InP growth by VME. The MQW laser emits at a 1.54- mu m wavelength and exhibited no degradation after over 6000 h of room-temperature CW operation. The results obtained demonstrate the high quality of the new MQW laser structure on Si and suggest the potential for optoelectronic integrated circuits using InP-based optical devices and Si-LSIs.<>
Keywords :
III-V semiconductors; dislocation density; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.54 micron; III-V semiconductors; InGaAs-InGaAsP layers; MQW laser; MQW layers; Si; crystalline quality; dislocation distribution; hybrid OMVPE/VME; long-life lasers; optoelectronic integrated circuits; vapor mixing epitaxy; Crystallization; Degradation; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical mixing; Photonic integrated circuits; Quantum well devices; Quantum well lasers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235555
