Vertical integration of structured resonant tunneling diodes on InP for multi-valued memory applications

Author

Kao, Y.C. ; Seabaugh, A.C. ; Yuan, H.T.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

489

Lastpage

492

Abstract

The authors report vertical integration of AlAs/InGaAs/InAs/InGaAs/AlAs resonant tunneling diode (RTD) structures on InP; as many as 15 have been grown in series combination. They show that hysteresis in the current-voltage characteristics caused by series resistance can be reduced by doping the resonant tunneling double barrier structures, and further reduction in hysteresis is possible through structural modifications. The doped RTDs have reduced resonance voltage with approximately equal peak spacings and good peak-to-valley ratios. Using an FET as a constant current load with an 8-peak vertically integrated RTD device, a nine-state multivalued memory is demonstrated.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated memory circuits; monolithic integrated circuits; resonant tunnelling devices; tunnel diodes; AlAs-InGaAs-InAs-InGaAs-AlAs; FET constant current load; RTD structures; current-voltage characteristics; doping; hysteresis; multi-valued memory applications; nine-state multivalued memory; resonance voltage; resonant tunneling double barrier structures; series combination; series resistance; structural modifications; structured resonant tunneling diodes; vertical integration; Current-voltage characteristics; Diodes; Doping; FETs; Hysteresis; Indium gallium arsenide; Indium phosphide; Resonance; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235557

Filename

235557