Growth of indium phosphide by solid source molecular beam epitaxy

Author

Stanley, C.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1992

fDate

21-24 April 1992

Firstpage

481

Lastpage

484

Abstract

For the InP solid source molecular beam epitaxy it is shown that P/sub 4/ tetramers are at least 20 times less effective at incorporating into the InP lattice than P/sub 2/ dimers. The P/sub 2/ incorporation rate remains approximately constant for fixed incident flux in the normal temperature regime for growth between approximately=480-520 degrees C, but the morphology of the

Keywords

III-V semiconductors; carrier density; carrier mobility; chemical beam epitaxial growth; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface structure; 480 to 520 degC; InP; P/sub 2/ dimers; P/sub 4/ tetramers; electron densities; incorporation rate; morphology; normal temperature regime; peak mobilities; solid source molecular beam epitaxy; thick layers; Electron mobility; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Solids; Substrates; Surface morphology; Surface reconstruction; Switches; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235559

Filename

235559

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3306580