Device optimization of laser and heterobipolar transistor for laser/driver OEIC

Author

Schlereth, H.-H. ; Kuhn, E. ; Laube, G. ; Kaiser, D. ; Wunstel, K.

Author_Institution

Div. of Optoelectron., Alcatel-SEL, Stuttgart, Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

477

Lastpage

480

Abstract

The authors recently reported the integration of a SIBH laser and an invertible heterobipolar transistor as an emitter follower in a 600-Mb/s OEIC (optoelectronic integrated circuit) on n-doped InP substrate. By optimization of the transistor´s base doping and the transistor geometry, an improvement of the frequency behavior has been achieved. The DC characteristic should be sufficient for application in an integrated circuit. together with the results of the 1.5- mu m SIBH laser on semi-insulating InP this appears to be a good basis for the realization of a transmitter OEIC consisting of a laser and a differential amplifier electronic circuit including resistors and capacitors.<>

Keywords

bipolar integrated circuits; integrated optoelectronics; semiconductor lasers; 600 Mbit/s; DC characteristic; HBT; InP; SIBH laser; base doping; capacitors; device optimisation; differential amplifier electronic circuit; emitter follower; frequency behavior; invertible heterobipolar transistor; laser/driver OEIC; n-doped InP substrate; resistors; transistor geometry; transmitter OEIC; Application specific integrated circuits; Differential amplifiers; Doping; Electronic circuits; Frequency; Geometrical optics; Indium phosphide; Optoelectronic devices; Resistors; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235560

Filename

235560