Title :
Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators
Author :
Vitusevich, S.A.
Author_Institution :
Center of Nanoelectron. Syst. for Inf. Technol., Inst. fuer Bio- undNanosysteme & CNI, Julich
Abstract :
Noise and transport properties of state-of-the-art AlGaN/GaN high electron mobility transistor (HEMT) heterostructures are analyzed with respect to high-frequency oscillator applications for different dissipated powers. The phase noise of a monolithic microwave integrated circuit oscillator based on the best choice AlGaN/GaN HEMT amplifier was investigated. A low level of the phase noise of the oscillator was registered. The up-conversion factor was found to be as low as 15 MHz/V for a frequency offset of 100 KHz, demonstrating that AlGaN/GaN HEMTs offer an excellent potential for a wide range of microwave applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC oscillators; aluminium compounds; field effect MMIC; flicker noise; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; semiconductor heterojunctions; wide band gap semiconductors; AlGaN-GaN; HEMT amplifier; HEMT heterostructure; flicker noise; high electron mobility transistor; high-frequency oscillator; low-noise microwave device; monolithic microwave integrated circuit oscillator; phase noise; transport property; up-conversion factor; Aluminum gallium nitride; Gallium nitride; HEMTs; Integrated circuit noise; MMICs; MODFETs; Microwave devices; Microwave integrated circuits; Microwave oscillators; Phase noise;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294574
