Title :
Gas source molecular beam epitaxy of GaInAs and GaInAsP strained layer quantum well lasers emitting at 1.5 mu m
Author :
Starck, C. ; Emery, J.-Y. ; Simes, R.J. ; Pagnod-Rossiaux, P. ; Gaborit, F. ; Matabon, M. ; Pommereau, F. ; Goldstein, L. ; Barrau, J.
Author_Institution :
Alcatel-Alsthom Recherche, Marcoussis, France
Abstract :
The authors report on high-quality MQW (multiquantum well) lasers with compressively and tensile-strained wells grown by gas source molecular beam epitaxy (GSMBE). Photocurrent and photoluminescence experiments show narrow and intense lines for compressively strained structures and broad spectra, without excitonic lines for tensile-strained quantum wells. These observations can be explained by the properties of the band structure. The fabrication of high-performance 1.48- mu m Fabry-Perot and 1.55- mu m DFB (distributed feedback) lasers with strained quaternary QWs has been demonstrated. Buried heterostructure lasers have realized by GSMBE with LPE regrowth.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; laser transitions; luminescence of inorganic solids; photoconductivity; photoluminescence; semiconductor growth; semiconductor lasers; 1.48 micron; 1.5 micron; 1.55 micron; DFB lasers; Fabry-Perot lasers; GSMBE; GaInAs; GaInAsP; LPE regrowth; band structure; buried heterostructure lasers; compressively strained wells; fabrication; gas source molecular beam epitaxy; high-performance; high-quality MQW; photocurrent; photoluminescence; strained layer quantum well lasers; tensile-strained wells; Distributed feedback devices; Fabry-Perot; Gas lasers; Laser feedback; Molecular beam epitaxial growth; Optical device fabrication; Photoconductivity; Photoluminescence; Quantum well devices; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235565
