OMCVD growth of strained Al/sub x/Ga/sub y/In/sub 1-x-y/As for low threshold 1.3 mu m and 1.55 mu m quantum well lasers

Author

Bhat, R. ; Zah, C.E. ; Koza, M.A. ; Hwang, D.-M.D. ; Favire, F.J. ; Pathak, B.

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

453

Lastpage

456

Abstract

It is shown that low threshold current density compressive and tensile strained lasers with AlGaInAs QWs (quantum wells) can be fabricated with easily controllable QW thicknesses in the range of 7-15 nm. It is also shown that it is possible to adjust the emission wavelength from 1.32 to 1.62 mu m while maintaining the QW thickness and strain. The presence of Al in the QWs does not degrade the laser performance, with a threshold current density as low as 96 A/cm/sup 2/ being obtained for compressively strained 1.32- mu m lasers. Tensile strained 1.36- mu m lasers with a threshold current density as low as 256 A/cm/sup 2/ were achieved for the first time.<>

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 1.32 to 1.62 micron; 1.55 micron; 7 to 15 nm; AlGaInAs; OMCVD growth; QW thickness; compressive strained lasers; current density; emission wavelength; laser performance; low threshold; tensile strained lasers; Artificial intelligence; Capacitive sensors; Fiber lasers; Indium gallium arsenide; Laser theory; Optical arrays; Optical sensors; Power lasers; Quantum well lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235566

Filename

235566