DocumentCode

330680

Title

Memory Effect Involving Fib-Induced Ga-Nanocrystals In GaAs/AIGaAs Heterojunction FETs

Author

Kim, Hoon ; Noda, Takeshi ; Sakaki, Hiroyuki

Author_Institution

Research Center for Advanced Science and Technology, University of Tokyo

fYear

1998

fDate

13-16 July 1998

Firstpage

148

Lastpage

149

Keywords

Electrons; FETs; Gallium arsenide; Heterojunctions; Hysteresis; Molecular beam epitaxial growth; Nanocrystals; Temperature; Tunneling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location

Kyoungju, South Korea

Print_ISBN

4-930813-83-2

Type

conf

DOI

10.1109/IMNC.1998.730017

Filename

730017