Dry etching process in Gunn diode technology

Author

Proust, N. ; Collot, P. ; di Forte-Poisson, M.A. ; Brylinski, C. ; Campoli, B.

Author_Institution

Thomson-CSF, Orsay, France

fYear

1992

fDate

21-24 April 1992

Firstpage

431

Lastpage

433

Abstract

Recent advances in 94-GHz Gunn diode technology are reported. Reactive ion etching (RIE) has been used for mesa processing instead of FeCl/sub 3/ photochemical InP etching. I(V) measurements performed on diodes of 50- mu m diameter in both cases are similar. The on-wafer saturation current homogeneity is enhanced when RIE is performed. A smaller dispersion (3% compared to 7-15%) on the saturation current is obtained when RIE is used. CW (continuous wave) microwave power performances are quite identical. 62-mW diodes oscillate at 94 GHz with 1.9% efficiency.<>

Keywords

Gunn diodes; III-V semiconductors; indium compounds; sputter etching; 1.9 percent; 50 micron; 62 mW; 94 GHz; CW microwave power performance; Gunn diode technology; I-V measurements; InP; dry etching process; mesa processing; on-wafer saturation current homogeneity; reactive ion etching; saturation current; Diodes; Dry etching; Gold; Gunn devices; Hydrogen; Indium phosphide; Millimeter wave technology; Ohmic contacts; Performance evaluation; Photochemistry;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235572

Filename

235572