Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors

Author

Jalali, B. ; Levi, A.F.J. ; Chuang, S.L. ; Smith, P.R. ; Humphrey, D.A. ; Nottenburg, R.N. ; Sivco, D. ; Cho, A.Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

418

Lastpage

419

Abstract

The authors present two experimental results which are of direct consequence in the design of high-performance n-p-n AlInAs/InGaAs heterostructure bipolar transistors (HBTs). First, it is shown that the effective heterostructure valence band offset is independent of composition and strain for pseudomorphic base In/sub x/Ga/sub 1-x/As HBTs in the range 0.5>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; valence bands; Al/sub 0.48/In/sub 0.52/As-InGaAs; HBT; avalanche multiplication; base thickness; common emitter current gain; delay time; design; dynamic transistor behavior; effective heterostructure valence band offset; high-performance; injected electrons; n-p-n AlInAs/InGaAs heterostructure bipolar transistors; nonequilibrium distribution; pseudomorphic base; static transistor behaviour; strain; vertical scaling; Bipolar transistors; Capacitive sensors; Chemicals; Current measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235575

Filename

235575