InP based HBTs-technology, performance and applications

Author

Fiedler, F. ; Mause, K. ; Pitz, G. ; Fritzsche, D. ; Kuphal, E. ; Krautle, H.

Author_Institution

Deutsche Bundespost Telekom, Darmstadt, Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

404

Lastpage

409

Abstract

An overview is given of the research activities and the state of development of InGaAs(P)/InP and InAlAs/InGaAs/InP HBTs (heterojunction bipolar transistors) in Europe. Although only a few groups are working on InP-based HBTs, reasonable device performance has been achieved. Nearly all the results on InP-based HBTs are from groups whose aim is to integrate these devices in OEICs (optoelectronic integrated circuits) for optical communication systems in the wavelength range from 1.3 to 1.55 mu m. The good results obtained indicate that, after solving some problems like surface passivation, material selective dry etching, and planarization, the high-speed potential of InP-based HBTs can be made commercially available.<>

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; research initiatives; reviews; 1.3 to 1.55 micron; Europe; InAlAs-InGaAs-InP; InGaAs-InP; InGaAsP-InP; InP based HBT technology; device performance; heterojunction bipolar transistors; high-speed potential; material selective dry etching; optical communication systems; optoelectronic integrated circuits; overview; planarization; research activities; surface passivation; Europe; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical materials; Optical surface waves; Passivation; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235578

Filename

235578