Numerical simulation of InP/InGaAs npn heterojunction phototransistors

Author

Owens, R.E. ; Zhang, H.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

397

Lastpage

400

Abstract

A drift-diffusion-based numerical simulation of an npn InP/In/sub 0.53/Ga/sub 0.47/As heterojunction phototransistor (HPT) is described. With the device in a floating-base common emitter configuration, I-V characteristics, optical gain versus input optical power, and spectral response are presented. These characteristics are consistent with device characteristics in the literature. It is shown that space charge region recombination is responsible for reductions in gain over the ideal analytical model. Significant gain and sensitivity enhancement through reduction of this recombination current is attained through the insertion of a thin lightly doped region in the emitter.<>

Keywords

III-V semiconductors; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; semiconductor device models; I-V characteristics; InP-In/sub 0.53/Ga/sub 0.47/As; drift-diffusion-based numerical simulation; floating-base common emitter configuration; gain; npn heterojunction phototransistors; optical gain; sensitivity enhancement; space charge region recombination; spectral response; thin lightly doped region; Analytical models; Heterojunctions; Indium gallium arsenide; Indium phosphide; Numerical simulation; Optical devices; Optical sensors; Phototransistors; Space charge; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235579

Filename

235579