Gate tunneling current in In/sub 0.53/Ga/sub 0.47/As junction field-effect transistors

Author

Chung, Y.K. ; Lo, D.C.W. ; Forrest, S.R.

Author_Institution

Univ. of Southern California, Los Angeles, CA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

393

Lastpage

396

Abstract

Data are presented which conclusively eliminate channel current impact ionization as the dominant source of gate leakage current in InGaAs JFETs based on both the temperature and channel current dependence. At the same time, strong evidence is presented which indicates that band-to-band tunneling at the gate-drain interface is the dominant source of gate leakage current. Based on these and previous results, it is concluded that InGaAs JFETs in linear preamplifiers such as optical receivers have an optimum channel doping of approximately 9*10/sup 16/ cm/sup -3/ at a bandwidth of 1 GHz. This value is obtained based on a tradeoff between gain, bandwidth, and noise.<>

Keywords

III-V semiconductors; gallium arsenide; impact ionisation; indium compounds; junction gate field effect transistors; leakage currents; tunnelling; 1 GHz; In/sub 0.53/Ga/sub 0.47/As; JFETs; band-to-band tunneling; bandwidth; channel current impact ionization; gain; gate leakage current; gate-drain interface; junction field-effect transistors; linear preamplifiers; noise; optical receivers; optimum channel doping; Bandwidth; Doping; Impact ionization; Indium gallium arsenide; JFETs; Leakage current; Optical receivers; Preamplifiers; Temperature dependence; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235580

Filename

235580