Single step implant isolation of p/sup +/-InP using MeV ion beams

Author

Ridgway, M.C. ; Jagadish, C. ; Elliman, R.G. ; Hauser, N.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1992

fDate

21-24 April 1992

Firstpage

294

Lastpage

297

Abstract

Implant isolation of epitaxial p/sup +/-InP layers using a single, high-energy O implant, with a projected range several times that of the conductive layer, has been investigated. Results are compared with two alternative implant isolation schemes, with ion ranges confined to the epitaxial layer: a multiple, low-energy O implant and a single, high-energy In implant. Single-step implant isolation offers considerable process simplification compared to conventional, multiple-implant sequences. Comparable sheet resistance values were achieved for the three different implant sequences, though the two schemes with ion ranges confined to the conductive layer yielded greater thermal stability. This difference is attributed to implantation-induced conduction in the semi-insulating substrate following the high-energy O implant.<>

Keywords

III-V semiconductors; indium compounds; ion implantation; oxygen; semiconductor doping; InP:O; MeV ion beams; conductive layer; epitaxial p/sup +/-InP layers; high energy implant; implantation-induced conduction; process simplification; semiinsulating substrate; sheet resistance values; single step implant isolation; Annealing; Conducting materials; Epitaxial layers; Implants; Indium phosphide; Ion beams; Power engineering and energy; Substrates; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235582

Filename

235582