Title :
Surface passivation of InP by in-situ dry process using PH/sub 3/-plasma and Se vapor
Author :
Sugino, T. ; Goda, K. ; Okitani, H. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
An in-situ dry process consisting of phosphine (PH/sub 3/)-plasma and selenium (Se) vapor treatments has been demonstrated to be effective in passivating the surface of InP. A significant dependence of the barrier height on metal work function is observed for Schottky junctions formed on the passivated surface of InP, suggesting that the Fermi level pinning is weakened by this process. It is demonstrated, moreover, that the improved interface of SiN/sub x//n-InP diodes is achieved by the present process, resulting in an interface state density as low as 7.5*10/sup 10/ eV/sup -1/ cm/sup -2/.<>
Keywords :
III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; interface electron states; passivation; silicon compounds; work function; Fermi level pinning; InP; PH/sub 3/ plasma treatment; Schottky junctions; Se vapour treatment; SiN/sub x/-InP; barrier height; diodes; in-situ dry process; interface state density; metal work function; Atomic layer deposition; Coils; Electrodes; Etching; Indium phosphide; Inductors; Interface states; Passivation; Radio frequency; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235583
