DocumentCode :
330708
Title :
The origin of photoluminescence In Ge - implanted SiO/sub 2/ layer
Author :
Kim, H.B. ; Chae, K.H. ; Whang, C.N. ; Yeong, J.Y. ; Oh, M.S. ; Im, S. ; Song, J.H.
Author_Institution :
Yonsei University
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
204
Lastpage :
205
Keywords :
Annealing; Bonding; Integrated circuit technology; Ion implantation; Luminescence; Nanocrystals; Nitrogen; Photoluminescence; Spectroscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.730045
Filename :
730045
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330708
