DocumentCode :
330711
Title :
Characterization Of The Nitrided GaAs Thin Layers After Rapid Thermal Annealing By Using Raman Scattering
Author :
Koh, Eui Kwan ; Park, Young Ju ; Kim, Eun Kyu ; Choh, Sung Ho
Author_Institution :
Korea University
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
210
Lastpage :
211
Keywords :
Bandwidth; Frequency; Gallium arsenide; Phonons; Physics; Plasma properties; Plasma temperature; Raman scattering; Rapid thermal annealing; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.730048
Filename :
730048
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330711
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