Recent advances in chemical beam epitaxy

Author

Tsang, W.T.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

274

Lastpage

280

Abstract

Chemical beam epitaxy (CBE) continues to make very important advances in several areas: (1) large-area material uniformity and process control, (2) new precursors and gas source doping and (3) device applications. Recent developments in InP-based CBE are reviewed here. Very significant progress has also been made in GaAs-based CBE, especially the great success of C-doped HBT circuits, which firmly established the importance of CBE for GaAs electronic applications. Judging from the rapid progress and the high quality of materials and devices prepared by CBE, it is expected that CBE will be a technologically important epitaxial growth technique.<>

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; integrated optoelectronics; semiconductor doping; semiconductor growth; CBE; GaAs:C; GaInAsP; HBT circuits; InGaAs; InP; chemical beam epitaxy; device applications; epitaxial growth technique; gas source doping; large-area material uniformity; optoelectronic devices; process control; Chemicals; Doping; Epitaxial growth; Gain measurement; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Reproducibility of results; Thickness measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235586

Filename

235586