High quality polishing of InP substrates

High-quality polishing technologies including cleaning and packaging methods have been developed. The quality of InP substrates thus prepared has been evaluated by MBE (molecular-beam epitaxy) and MOCVD (metal-organic chemical vapor deposition) growth. Epitaxial growth was performed on InP substrates stored for more than two months, without any wet chemical pretreatment before epitaxial growth. Hall measurement results of epitaxial layers were comparable with or better than those obtained for InP substrates treated by conventional wet chemical pretreatment. Silicon and oxygen contaminations at the interface between epitaxial layers and substrates were largely decreased without any pretreatment before epitaxial growth.<>