Title :
Development of 3-inch diameter InP single crystals with low dislocation density using VCZ technique
Author :
Hosokawa, Y. ; Kawarabayashi, S. ; Yabuhara, Y. ; Morioka, M. ; Yokogawa, M. ; Fujita, K. ; Akai, S.
Author_Institution :
Sumimoto Electric Industries Ltd., Hyogo, Japan
Abstract :
Low-dislocation-density InP single crystals of 3-in diameter have been successfully developed by the VCZ (vapor pressure controlled Czochralski) growth technique. The dopants used were Fe, Zn, and S. In the case of Fe-doped 3-in diameter InP crystal, the EPD (etch pit density) across the ingot was in the range of 3.5-7*10/sup 3/ cm/sup -2/, one order of magnitude less than that of conventional liquid encapsulation Czochralski (LEC) crystals. In the case of Zn-doped crystal, the low EPD area (EPD<500 cm/sup -2/) of 3-in-diameter wafer with carrier concentration of 4.7*10/sup 18/ cm/sup -3/ was 34 cm/sup 2/, about two times larger than that of a wafer grown by the conventional LEC method. A S-doped InP crystal grown with a carrier concentration of approximately 3*10/sup 18/ cm/sup -3/ had a low EPD area of 21.5 cm/sup 2/, nearly two times larger than that of conventional crystals with carrier concentration of approximately 4*10/sup 18/ cm/sup -3/.<>
Keywords :
III-V semiconductors; carrier density; crystal growth from melt; dislocation density; etching; indium compounds; iron; semiconductor doping; semiconductor growth; sulphur; zinc; 3 in; InP:Fe,Zn,S; VCZ technique; carrier concentration; etch pit density; low dislocation density single crystals; vapour pressure controlled Czochralski method; Crystals; Doping; Etching; Impurities; Indium phosphide; Magnetic field measurement; Substrates; Temperature; Thermal stresses; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235590
