Design of high-speed and high-sensitivity photodiode with an input optical waveguide on semi-insulating InP substrate

Author

Kato, Kazutoshi ; Hata, Susumu ; Yoshida, Junichi ; Kozen, Atsuo

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

fYear

1992

fDate

21-24 April 1992

Firstpage

254

Lastpage

257

Abstract

Calculations based on the optical coupling theory predict than an InGaAs waveguide photodiode (WGPD) consisting of a multimode waveguide configuration can be designed to obtain high sensitivity with no carrier-transit-time limitation. The fabricated multimode WGPDs demonstrate high external quantum efficiency at a 1.55- mu m-wavelength and a bandwidth of 50 GHz, which is limited by the CR-time constant. Integrating this WGPD with an input tapered waveguide can enhance the lateral coupling efficiency, leading to freedom from the CR-time-constant limitation. The WGPD with an input waveguide exhibits an external quantum efficiency that is independent of WGPD width, raising the possibility of an ultrahigh-speed and high-sensitivity WGPD.<>

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; 1.55 micron; 50 GHz; CR-time-constant limitation; InGaAs; InP semiinsulating substrate; high external quantum efficiency; input tapered waveguide; lateral coupling efficiency; multimode waveguide configuration; optical coupling theory; waveguide photodiode; Bandwidth; Frequency; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical design; Optical sensors; Optical waveguide theory; Optical waveguides; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235591

Filename

235591